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PDF IRFI4024H-117P Data sheet ( Hoja de datos )
| Número de pieza | IRFI4024H-117P | |
| Descripción | DIGITAL AUDIO MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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DIGITAL AUDIO MOSFET
PD - 97254
IRFI4024H-117P
Features
Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low RDS(ON) for improved efficiency
Low Qg and Qsw for better THD and
improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 100W per channel into
6Ω load in full-bridge configuration
amplifier
Lead-free package
Key Parameters g
VDS 55
RDS(ON) typ. @ 10V
48
Qg typ.
8.9
Qsw typ.
4.3
RG(int) typ.
2.3
TJ max
150
V
m:
nC
nC
Ω
°C
TO-220 Full-Pak 5 PIN
G1, G2
D1, D2
S1, S2
Description
Gate
Drain
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connecwtwew.DdataiSnhehet4aU.lcfom-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings g
Parameter
VDS
VGS
ID @ TC = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
EAS Single Pulse Avalanche Energyd
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance g
Parameter
RθJC
Junction-to-Case f
RθJA Junction-to-Ambient (free air)
Max.
55
±20
11
6.9
44
14
5.4
0.11
7.4
-55 to +150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
9.21
65
Units
V
A
W
W/°C
mJ
°C
Units
°C/W
www.irf.com
1
08/24/06
1 page  
220
ID = 7.7A
180
140
100 TJ = 125°C
60
TJ = 25°C
20
2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 13b. Unclamped Inductive Test Circuit
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
L
VCC
DUT
0
1K
Fig 15a. Gate Charge Test Circuit
www.irf.com
IRFI4024H-117P
30
ID
25
TOP
1.8A
3.5A
BOTTOM 7.7A
20
15
10
5
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13a. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
tp
IAS
Fig 13c. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b Gate Charge Waveform
5
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| PDF Descargar | [ Datasheet IRFI4024H-117P.PDF ] | |
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