DataSheetWiki


NTGD4161P fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTGD4161P
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





1 Page

No Preview Available !





NTGD4161P fiche technique
NTGD4161P
Power MOSFET
−30 V, −2.3 A, Dual P−Channel, TSOP−6
Features
Fast Switching Speed
Low Gate Charge
Low RDS(on)
Independently Connected Devices to Provide Design Flexibility
This is a Pb−Free Device
Applications
Load Switch
Battery Protection
Portable Devices Like PDAs, Cellular Phones and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−30 V
±20 V
−2.1 A
−1.5
−2.3
www.DataSheet4U.com
1.1 W
t5s
1.3
Continuous Drain
Current (Note 2)
Steady TA = 25°C
State
TA = 85°C
Power Dissipation (Note 2)
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
ID
PD
IDM
TJ,
TSTG
IS
TL
−1.5
−1.1
0.6
−10
−55 to
150
−0.8
260
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Ambient − t 5 s (Note 1)
Symbol
RqJA
Max
115
225
95
Unit
°C/W
Junction−to−Case − Steady State (Note 1)
RqJC
40
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in. pad size
(Cu. area = 1.2 in2 [1 oz] including traces)
2. When surface mounted to an FR4 board using minimum recommended
pad size (Cu. area = 0.047 in2)
http://onsemi.com
V(BR)DSS
−30 V
RDS(on) Max
160 mW @ −10 V
280 mW @ −4.5 V
P−Channel
(MOSFET1)
D1
P−Channel
(MOSFET2)
D2
G1 G2
S1 S2
1
TSOP−6
CASE 318G
STYLE 13
MARKING DIAGRAM
D1 S1 D2
S8 MG
G
G1 S2 G2
S8 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NTGD4161PT1G TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 1
1
Publication Order Number:
NTGD4161P/D

PagesPages 5
Télécharger [ NTGD4161P ]


Fiche technique recommandé

No Description détaillée Fabricant
NTGD4161P Power MOSFET ( Transistor ) ON Semiconductor
ON Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche