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PDF NTMS3P03R2 Data sheet ( Hoja de datos )
| Número de pieza | NTMS3P03R2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMS3P03R2
Power MOSFET
−3.05 Amps, −30 Volts
P−Channel SOIC−8
Features
• High Efficiency Components in a Single SOIC−8 Package
• High Density Power MOSFET with Low RDS(on)
• Miniature SOIC−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for the SOIC−8 Package is Provided
• Pb−Free Package is Available
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless
Telephones
www.DataSheet4U.com
http://onsemi.com
−3.05 AMPERES
−30 VOLTS
0.085 W @ VGS = −10 V
P−Channel
D
G
S
8
1
SOIC−8
CASE 751
STYLE 13
MARKING DIAGRAM &
PIN ASSIGNMENT
D D DD
8
E3P03
AYWW G
G
1
NC S S G
E3P03 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS3P03R2
SOIC−8 2500/Tape & Reel
NTMS3P03R2G
SOIC−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
Publication Order Number:
NTMS3P03R2/D
1 page  
NTMS3P03R2
10000
VGS = 0 V
1200 VDS = 0 V
VGS = 0 V
1000
TJ = 150°C
1000 Ciss
800
TJ = 125°C
600 Crss
Ciss
100
10
6 10 14 18 22 26 30
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Drain−to−Source Leakage Current
vs. Voltage
400
Coss
200
TJ = 25°C
Crss
0
10 5 0 5 10 15 20 25
−VGS
−VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 8. Capacitance Variation
30
12
10
VDS
8
6
4 Q1
QT
Q2
30 1000
25
VDS = −24 V
ID = −3.05 A
VGS = −10 V
20 100
VGS
15
10 10
td(off)
tf
td(on)
tr
25
ID = −3.05 A
0
TJ = 25°C
01
0 2 4 6 8 10 12 14 16
1
10 100
Qg, TOTAL GATE CHARGE (nC)
RG, GATE RESISTANCE (W)
Figure 9. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
1000
VDS = −24 V
ID = −1.5 A
VGS = −4.5 V
3
VGS = 0 V
2.5 TJ = 25°C
2
100
tr
tf
td(off)
td(on)
1.5
1
0.5
10 1 10 100
RG, GATE RESISTANCE (W)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
00.2 0.4 0.6 0.8 1 1.2
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 12. Diode Forward Voltage vs. Current
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTMS3P03R2.PDF ] | |
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