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PDF NTHS4111P Data sheet ( Hoja de datos )
| Número de pieza | NTHS4111P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTHS4111P
Power MOSFET
−30 V, −6.1 A, Single P−Channel, ChipFETt
Features
• Offers an Ultra Low RDS(on) Solution in the ChipFET Package
• ChipFET Package 40% Smaller Footprint than TSOP−6
• Low Profile (<1.1 mm) for Extremely Thin Environments
• Standard Logic Level Gate Drive
• Pb−Free Package is Available
Applications
• Notebook Computer Load Switch
• Battery and Load Management Applications in Portable Equipment
• Charge Control in Battery Chargers
• Buck and Boost Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t ≤ 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−30 V
±20 V
−4.4 A
w−ww3.D.2ataSheet4U.com
−6.1
1.3 W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t ≤ 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
2.5
−3.3 A
−2.3
0.7 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−30
−55 to
150
−2.1
260
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t ≤ 10 s (Note 1)
Junction−to−Ambient – Steady State (Note 2)
RqJA
RqJA
RqJA
95 °C/W
50
175
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.045 in sq).
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
http://onsemi.com
V(BR)DSS
−30 V
RDS(on) Typ
33 mW @ −10 V
52 mW @ −4.5 V
S
ID Max
−6.1 A
G
D
P−Channel MOSFET
8
1
ChipFET
CASE 1206A
STYLE 1
PIN
CONNECTIONS
MARKING
DIAGRAM
D8
D7
D6
S5
1D
2D
3D
4G
1
2
3
4
8
7
6
5
TH = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTHS4111PT1 ChipFET 3000/Tape & Reel
NTHS4111PT1G
ChipFET
(Pb−free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHS4111P/D
1 page  
NTHS4111P
1 Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
1E−06
Single Pulse
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
t, TIME (s)
Figure 12. FET Thermal Response
1E+01
1E+02
1E+03
http://onsemi.com
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| PDF Descargar | [ Datasheet NTHS4111P.PDF ] | |
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