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PDF NTHD5904N Data sheet ( Hoja de datos )

Número de pieza NTHD5904N
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
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NTHD5904N
Power MOSFET
20 V, 4.5 A, Dual N−Channel, ChipFETt
Features
Low RDS(on) and Fast Switching Speed
Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.
Ideal Device for Applications Where Board Space is at a Premium.
ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Applications Where Heat Transfer is Required.
Pb−Free Packages are Available
Applications
DC−DC Buck or Boost Converters
Low Side Switching
Optimized for Battery and Low Side Switching Applications in
Computing and Portable Equipment
http://onsemi.com
V(BR)DSS
20 V
RDS(on) TYP
40 mW @ 4.5 V
55 mW @ 2.5 V
ID MAX
4.5 A
N−Channel MOSFET
D1, D2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t5s
Steady
State
TA=25°C
TA=85°C
TA=25°C
TA=25°C
VDSS
VGS
ID
PD
20 V
±8.0 V
3.3 A
w2w.w4.DataSheet4U.com
4.5
1.13 W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA=25°C
TA=85°C
TA=25°C
ID
PD
2.5 A
1.8
0.64 W
Pulsed Drain Current
tp=10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
10
−55 to
150
2.6
260
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1) RqJA
110 °C/W
Junction−to−Ambient – t 5 s (Note 1)
RqJA
60
Junction−to−Ambient – Steady State (Note 2) RqJA
195
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.214 in sq).
3. ESD Rating Information: Human Body Model (HBM) Class 0.
G1, G2
S1, S2
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
(Top View)
D3 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 2
1
Publication Order Number:
NTHD5904N/D

1 page




NTHD5904N pdf
NTHD5904N
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A−03
ISSUE G
HE
e1
D
8765
1234
E
b
e
A
q
L
c
0.05 (0.002)
5678
4321
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
MILLIMETERS
DIM MIN NOM MAX
A 1.00
1.05
1.10
b 0.25 0.30 0.35
c 0.10 0.15 0.20
D 2.95
3.05
3.10
E 1.55
1.65
1.70
e 0.65 BSC
e1 0.55 BSC
L 0.28 0.35 0.42
H E 1.80
1.90
2.00
q 5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
0.011
0.071
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.014
0.075
5° NOM
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
0.457
0.018
2.032
0.08
SOLDERING FOOTPRINT*
0.635
0.025
0.635
0.025
2.032
0.08
1.092
0.043
0.178
0.007
0.66
0.026
0.711
0.028
Basic
ǒ ǓSCALE 20:1
mm
inches
0.457
0.018
0.66
0.026
0.254
0.010
SCALE 20:1
ǒ mm Ǔ
inches
Style 2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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