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PDF IRF7832PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7832PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95016A
IRF7832PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l Lead-Free
VDSS
30V
S
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
S
S
G
HEXFET® Power MOSFET
RDS(on) max
Qg
:4.0m @VGS = 10V 34nC
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
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Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
20
16
160
2.5
1.6
0.02
-55 to + 155
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through are on page 10
www.irf.com
1
06/30/05
1 page  
IRF7832PbF
24
20
16
12
8
4
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.5
2.0
1.5 ID = 250µA
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature (°C)
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
1E-006
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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100
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7832PBF.PDF ] | |
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