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PDF PZTA92T1 Data sheet ( Hoja de datos )
| Número de pieza | PZTA92T1 | |
| Descripción | PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZTA92T1/D
High Voltage Transistor
PNP Silicon
COLLECTOR 2,4
PZTA92T1
Motorola Preferred Device
MAXIMUM RATINGS
BASE
1
EMITTER 3
SOT–223 PACKAGE
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Total Power Dissipation up to TA = 25°C(1)
Storage Temperature Range
Junction Temperature
DEVICE MARKING
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
– 300
–300
– 5.0
– 500
1.5
– 65 to +150
150
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
4
1
2
3
CASE 318E–04, STYLE 1
TO–261AA
P2D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance from Junction to Ambient(1)
RθJA
83.3
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
°C/W
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0)
Collector–Base Cutoff Current (VCB = – 200 Vdc, IE = 0)
Emitter–Base Cutoff Current (VBE = – 3.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain(2)
(IC = – 1.0 mAdc, VCE = – 10 Vdc)
(IC = –10 mAdc, VCE = – 10 Vdc)
(IC = – 30 mAdc, VCE = – 10 Vdc)
Saturation Voltages
(IC = –20 mAdc, IB = –2.0 mAdc)
(IC = –20 mAdc, IB = –2.0 mAdc)
DYNAMIC CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
– 300
– 300
– 5.0
—
—
25
40
25
—
—
—
—
—
– 0.25
– 0.1
—
—
—
– 0.5
– 0.9
Vdc
Vdc
Vdc
µAdc
µAdc
—
Vdc
Collector–Base Capacitance @ f = 1.0 MHz (VCB = –20 Vdc, IE = 0)
Ccb — 6.0 pF
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = – 20 Vdc, f = 100 MHz)
fT 50 — MHz
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle = 2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet PZTA92T1.PDF ] | |
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