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PDF UPG2314T5N Data sheet ( Hoja de datos )

Número de pieza UPG2314T5N
Descripción GaAs HBT INTEGRATED CIRCUIT
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PRELIMINARY DATA SHEET
GaAs HBT INTEGRATED CIRCUIT
uPG2314T5N
POWER AMPLIFIER FOR BluetoothTM Class1
DESCRIPTION
The uPG2314T5N is a GaAs HBT MMIC power amplifier which was developed for BluetoothTM Class1.
This device realizes high efficiency, high gain and high output power by using InGaP HBT.
This device is housed in a 6-pin TSON Thin Small Out-line Non-Leaded package. And this package is able to high-density
surface mounting.
FEATURES
Operating Frequency
Supply Voltage
Control Voltage
Circuit Current
Output Power
Gain Control Range
High Efficiency
High-density surface mounting
: fopt = 2400 to 2500MHz 2450MHz TYP.
: VCC1,2 = 2.7 to 3.6V 3.0V TYP.
: Vcont = 0 to 3.6V 3.0V TYP.
: Vbias + Venable = 0 to 3.1V 3.0V TYP.
: ICC = 65mA TYP. @ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 3.0V, Pin = 0dBm
: Pout = +20.0dBm TYP.@ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 3.0V, Pin = 0dBm
: GCR = 23dB TYP.@ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 0 to 3.0V, Pin = 0dBm
: PAE = 50 TYP.
: 6-pin TSON package 1.5 1.5 0.37 mm
APPLICATION
Power Amplifier for BluetoothTM Class1
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ORDERING INFORMATION
Part Number
uPG2314T5N – E2
Order Number
uPG2314T5N – E2 A
Package
6-pin plastic TSON
Pb-Free
Marking
G5D
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order : uPG2314T5N
Supplying Form
Embossed tape 8 mm wide
Pin1,6 face the perforation side of tape
Qty 3kpcs/reel
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Document No. PG*****EJW8V0PDS ( 8th edition )
Date Published April 2006 CP(K)

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UPG2314T5N pdf
PACKAGE DIMENSIONS
6-PIN PLASTIC TSON UNIT: mm
uPG2314T5N
Preliminary Data Sheet
5

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