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BC327-40 fiches techniques PDF

ON Semiconductor - Amplifier Transistors (PNP Silicon)

Numéro de référence BC327-40
Description Amplifier Transistors (PNP Silicon)
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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BC327-40 fiche technique
BC327, BC327-16,
BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS
Rating
Collector Emitter Voltage
Collector Emitter Voltage
EmitterBase Voltage
Collector Current Continuous
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Symbol
VCEO
VCES
VEBO
IC
PD
Value
45
50
5.0
800
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
1.5
12
55 to +150
W
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
200 °C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC
xxx
AYWW G
G
BCxxx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 6
1
Publication Order Number:
BC327/D

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