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PDF 2SB1714 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1714 | |
| Descripción | Bipolar transistor | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
-2A / -30V Bipolar transistor
2SB1714
2SB1714
zApplications
Low frequency amplification, driver
zFeatures
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(VCE( sat) ≤ -370mV, at IC = -1.5A, IB= -75mA)
zStructure
PNP epitaxial planar silicon transistor
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6 1.5
(1)Base
(2)Collector
(3)Emitter
(1) (2)
(3)
0.4 0.5 0.4
1.5 1.5
3.0
0.4
Abbreviated symbol : XY
zAbsolute maximum ratings (Ta=25°C)
zPackaging specifications
Parameter
Symbol Limits
Unit
Package
MPT3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
VCBO
VCEO
VEBO
IC
ICP
−30 V
−30 V
−6 V
www.DataSheet4U.com
−2 A
−4 ∗1
Part No.
2SB1714
Packaging type
Taping
Code
T100
Basic ordering unit (pieces) 1000
Power dissipation
0.5 ∗2
PC W
2 ∗3
Junction temperature
Tj 150 °C
Storage temperature
Tstg
∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.
−55 to +150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat) ∗
hFE
fT
Cob
Min.
−30
−30
−6
−
−
−
270
−
−
Typ. Max. Unit
Conditions
−−
IC= −1mA
− − V IC= −10µA
−−
IE= −10µA
− −100 nA VCB= −30V
− −100
VEB= −6V
−180 −370 mV IC/IB= −1.5A/ −75A
− 680 − VCE= −2V, IC= −200mA
280 − MHz VCE= −2V, IE=200mA , f=100MHz
20 − pF VCB= −10V , IE=0mA , f=1MHz
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1714.PDF ] | |
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