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International Rectifier - (IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Numéro de référence IRHE9130
Description (IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Fabricant International Rectifier 
Logo International Rectifier 





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IRHE9130 fiche technique
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
PD - 90881C
IRHE9130
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-HardHEXFET®
MOSFETTECHNOLOGY
Product Summary
Part Number Radiation Level
IRHE9130 100K Rads (Si)
IRHE93130 300K Rads (Si)
RDS(on)
0.30
0.30
ID QPL Part Number
-6.5A JANSR2N7389U
-6.5A JANSF2N7389U
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devicwewws.DraetaStaheient4U.com
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
LCC - 18
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
-6.5
-4.1 A
-26
25 W
0.2 W/°C
±20 V
165 mJ
-6.5 A
2.5 mJ
-22 V/ns
-55 to 150
oC
300 ( for 5s)
0.42 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
2/20/03

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