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PDF D45H2 Data sheet ( Hoja de datos )
| Número de pieza | D45H2 | |
| Descripción | PNP EXPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTCD45H2
PNPEXPITAXIAL SILICON TRANSISTOR
PNP EXPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC D45H2 is a general purpose power application
and switching.
FEATURE
*Low Collector-Emitter Saturation Voltage
VCE(sat)=-1v(MAX)@-15A
*Fast Switching Speeds
1
TO-220
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
PARAMETER
SYMBOL
Collector to Emitter Voltage
Emitter To Base Voltage
VCEO
VEBO
Collector Current(DC)
IC
Collector Dissipation(Tc=25°C)
Collector Dissipation(Ta=25°C)
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Pc
Junction Temperature
Storage Temperature
Tj
Tstg
*PW<=10mS,Duty Cycle<=50%
1:BASE 2:COLLECTOR 3:EMITTER
VALUE
-30
-5
-10
50
1.67
150
-55 ~ +150
UNIT
V
V
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Cutoff Current
ICES
VCE=Rated ; VCEO,VEB=0
Emitter Cutoff current
IEBO
VEB=-5V,Ic=0
Collector Emitter Saturation
VCE(SAT) IC=-10A,IB=-0.1A
Voltage
Base Emitter Saturation Voltage VBE(SAT) IC=-10A,IB=-1A
DC Current Gain
hFE1
IC=-10A,VCE=-1V
Current Gain Bandwidth Product
FT VCE=-10V,IC=-0.5A
Output Capacitance
CCB VCB=-10V,f=1MHZ
Turn On Time
ton Ic=-5A,IB=-0.5A
Storage Time
tstg IB=-0.5A
Fall Time
tf
MIN TYP MAX UNIT
-10 µA
1 µA
-1 V
-1.5 V
100
40 MHZ
230 PF
135 nS
500 nS
100 nS
UTC
UNISONIC TECHNOLOGIES CO. LTD 1
QW-R203-003,B
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet D45H2.PDF ] | |
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