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PDF 2SB649A Data sheet ( Hoja de datos )
| Número de pieza | 2SB649A | |
| Descripción | TO-126C Plastic-Encapsulated Transistors | |
| Fabricantes | TRANSYS Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB649A (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Transys
Electronics
LIMITED
TO-126C Plastic-Encapsulated Transistors
2SB649/2SB649A TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: -1.5
Collector-base voltage
A
V(BR)CBO : -180 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
Test conditions
www.DataSheet4U.com
Ic=-1mA, IE=0
V(BR)CEO Ic=-10mA, IB=0
2SB649
2SB649A
MIN
-180
-120
-160
V(BR)EBO IE=-1mA, IC=0
-5
ICBO VCB=-160V, IE=0
IEBO
hFE(1)
hFE(2)
VEB=-4V, IC=0
VCE=-5V, IC=-150mA
VCE=-5V, IC=-500mA
2SB649
2SB649A
60
60
30
VCE(sat) IC=-500mA, IB=-50mA
VBE VCE=-5V, IC=-150mA
fT VCE=-5V, IC=-150mA
Cob VCB=-10V, IE=0, f=1MHz
TYP
140
27
MAX UNIT
V
V
V
-10 µA
-10 µA
320
200
-1 V
-1.5 V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
B
60-120
C
100-200
D
160-320
1 page | ||
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| PDF Descargar | [ Datasheet 2SB649A.PDF ] | |
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