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PDF 2SB647 Data sheet ( Hoja de datos )
| Número de pieza | 2SB647 | |
| Descripción | Silicon PNP Epitaxial | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB647 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
www.DataSheet4U.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
Maximum Collector Dissipation
Curve
1.2
0.8
0.4
0 50 100 150
Ambient Tmperature Ta (°C)
–500
–200
–100
Typical Transfer Characteristics
VCE = –5 V
Pulse
–50
–20
–10
–5
–2
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage VBE (V)
2SB647, 2SB647A
Typical Output Characteristics
–1.0
–120
–100
–0.8 –80
–60
–0.6 –4–030–20
–0.4 –10–5–2
–0.2
PC = 0.9 W
–1
–0.5mA
IB = 0
0 –2 –4 –6 –8 –10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
600
VCE = –5 V
Pulse
500
400
300 Ta = 75°C
25
200
–25
100
0
–1 –3 –10 –30 –100 –300 –1,000
Collector Current IC (mA)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SB647.PDF ] | |
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