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2SC3263 fiches techniques PDF

Allegro Micro Systems - Lapt Silicon NPN Epitaxial Planar Transistor

Numéro de référence 2SC3263
Description Lapt Silicon NPN Epitaxial Planar Transistor
Fabricant Allegro Micro Systems 
Logo Allegro Micro Systems 





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2SC3263 fiche technique
LAPT 2SC3263
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3263
230
230
5
15
4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=230V
IEBO
VEB=5V
V(BR)CEO
IC=25mA
hFE VCE=4V, IC=5A
VCE(sat)
IC=5A, IB=0.5A
fT VCE=12V, IE=–2A
COB VCB=10V, f=1MHz
hFE Rank O(50 to 100), Y(70 to 140)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2 ton
(V)
()
(A)
(V)
(V)
(mA)
(mA)
(µs)
60 12 5 10 –5 500 –500 0.30typ
(Ta=25°C)
2SC3263
100max
100max
230min
50min
2.0max
60typ
250typ
Unit
µA
µA
V
V
MHz
pF
tstg
(µs)
2.40typ
tf
(µs)
0.50typ
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
15
2.0A 1.5A
1.0A
600mA
400mA
10
200mA
100mA
5
50mA
IB=20mA
0
0 12 34
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
15
2 10
1
IC=10A
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5A
0
0 0.5 1.0 1.5 2.0
Base Current IB(A)
5
0
01 2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
200
(VCE=4V)
100
Typ
50
h FE– I C Temperature Characteristics (Typical)
200
(VCE=4V)
125˚C
100
25˚C
–30˚C
50
θ j-a– t Characteristics
3
1
0.5
10
0.02
0.1 0.5 1
Collector Current IC(A)
5 10 15
10
0.02
0.1 0.5 1
Collector Current IC(A)
5 10 15
0.1
1
10 100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
100
80
Typ
60
40
20
0
–0.02
–0.1
–1
Emitter Current IE(A)
–10
Safe Operating Area (Single Pulse)
40
10ms
10
DC
5
1
0.5
Without Heatsink
Natural Cooling
0.1
3
10 100
Collector-Emitter Voltage VCE(V)
300
Pc–Ta Derating
130
100
50
Without Heatsink
3.5
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150
63

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