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NTGD1100L fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTGD1100L
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NTGD1100L fiche technique
NTGD1100L
Power MOSFET
8 V, ±3.3 A, Load Switch with LevelShift,
PChannel, TSOP6
The NTGD1100L integrates a P and NChannel MOSFET in a
single package. This device is particularly suited for portable
electronic equipment where low control signals, low battery voltages
and high load currents are needed. The PChannel device is
specifically designed as a load switch using ON Semiconductor
stateofthearttrench technology. The NChannel, with an external
resistor (R1), functions as a levelshift to drive the PChannel. The
NChannel MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.5 V. The NTGD1100L operates on supply
lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V
applied to both VIN and VON/OFF
Features
Extremely Low RDS(on) Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
VIN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
ESD Rating of 3000 V
PbFree Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) www.DataSheet4U.com
Rating
Symbol Value Unit
Input Voltage (VDSS, PCh)
ON/OFF Voltage (VGS, NCh)
Continuous Load Current Steady
(Note 1)
State
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
Pulsed Load Current
tp = 10 ms
Operating Junction and Storage Temperature
VIN
VON/OFF
IL
PD
ILM
TJ,
TSTG
8.0
8.0
±3.3
±2.4
0.83
0.43
±10
55 to
150
V
V
A
W
A
°C
Source Current (Body Diode)
ESD Rating, MILSTD883D HBM
(100 pF, 1.5 kW)
IS
ESD
1.0 A
3.0 kV
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1) RmJA
150 °C/W
JunctiontoFoot – Steady State (Note 1)
RmJF
50
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2007
March, 2007 Rev. 6
1
http://onsemi.com
V(BR)DSS
8.0 V
RDS(on) TYP
40 mW @ 4.5 V
55 mW @ 2.5 V
80 mW @ 1.8 V
ID MAX
±3.3 A
SIMPLIFIED SCHEMATIC
4 2,3
Q2
6
5 Q1
1
1
TSOP6
CASE 318G
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1/G2 G1 S2
654
TZ M G
G
1 23
S1 D2 D2
TZ = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NTGD1100LT1
TSOP6 3000/Tape & Reel
NTGD1100LT1G
TSOP6
(PbFree)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGD1100L/D

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