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PDF KSA1625 Data sheet ( Hoja de datos )
| Número de pieza | KSA1625 | |
| Descripción | HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTCKSA1625 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage:
VCEO=-400V
*Collector Dissipation:
Pc(max)=625mW
*Low collector-Emitter saturation voltage
APPLICATIONS
*Telephone switching
*High voltage switch
1
TO-92
1:EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
-400
V
Collector-emitter voltage
VCEO
-400
V
Emitter-base voltage
VEBO -6 V
Collector dissipation(Ta=25°C)
Collector current
Pc
wwwIc.DataSheet4U.com
625
-300
mW
mA
Junction Temperature
Tj 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
BVCBO Ic=-100µA,IE=0
-400
Collector-emitter breakdown voltage BVCEO Ic=-1mA,IB=0
-400
Collector-emitter breakdown voltage BVCES Ic=-100µA,VBE=0
-400
Emitter-base breakdown voltage
BVEBO IE=-100µA,Ic=0
-5
Collector cut-off current
ICBO
VCB=-300V,IE=0
Collector cut-off current
ICES
VCB=-400V,VBE=0
Emitter cut-off current
IEBO
VEB=-4V,Ic=0
DC current gain(note)
VCE=-10V,Ic=-1mA
hFE
VCE=-10V,Ic=-10mA
VCE=-10V,Ic=-50mA
VCE=-10V,Ic=-100mA
60
70
70
40
Collector-emitter saturation voltage
VCE(sat)
Ic=-10mA,IB=-1mA
Ic=-50mA,IB=-5mA
Base-emitter saturation voltage
VBE(sat) Ic=-10mA,IB=-1mA
Output capacitance
Cob VCB=-20V,IE=0, f=1MHz
Note: Pulse test:PW<300µs, Duty Cycle<2%
TYP
MAX
-100
-1
100
300
-0.20
-0.5
-0.75
7
UNIT
V
V
V
V
nA
µA
nA
V
V
pF
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-067,A
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KSA1625.PDF ] | |
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