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PDF UF730 Data sheet ( Hoja de datos )

Número de pieza UF730
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! UF730 Hoja de datos, Descripción, Manual

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UNISONIC TECHNOLOGIES CO., LTD
UF730
5.5A, 400V, 1.0 OHM,
N-CHANNEL POWER MOSFET
MOSFET
DESCRIPTION
The UF730 power MOSFET is designed for high voltage, high
speed power switching applications such as switching power
suppliess, switching adaptors.
1
TO-220
FEATURES
* 5.5A, 400V, Low RDS(ON)(1.0)
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching
1
TO-220F
*Pb-free plating product number: UF730L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
Package
UF730-TA3-T
UF730L-TA3-T
TO-220
UF730-TF3-T
UF730L-TF3-T
TO-220F
Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
UF730L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd.
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UF730 pdf
UF730
TYPICAL PERFORMANCE CUVES (Unless Otherwise Specified)
MOSFET
Forward Bias Safe Operating Area
100 Operation in This Area
is Limited by RDS(on)
10 s
10
100 s
1
TC=25
TJ=Max Rated
0.1 Single Pulse
1 10
100
Drain to Source Voltage, VDS (V)
1ms
10ms
DC
1000
Maximum ContionuousDrain Current vs. Case
Temperature
6
4
2
0
25
50 75 100 125
Case Temperature, TC ( )
150
Output Characteristics
10
VGS=10
Pulse Duration=80 s
8
V GS=6.0V
Duty Cycle = 0.5% Max
6 VGS=5.5V
4
VGS=5.0V
2
VGS=4.5V
0
0
40
VGS=4.0V
80 120 160 200
Drain to Source Voltage, VDS (V)
Sturation Characteristics
10 Pulse Duration=80 s VGS=10V
Duty Cycle = 0.5% Max
8
VGS=6.0V
6
VGS=5.5V
4
VGS=5.0V
2 VGS=4.5V
VGS=4.0V
0
0
40 80 120 160 200
Drain to Source Voltage, VDS (V)
Transfer Characteristics
10
1
TJ=150
TJ=25
0.1
0.01
0
VDS 50V
Pulse Duration=80 s
Duty Cycle = 0.5% Max
2468
Gate to Source Voltage, VGS (V)
10
Drain to Source on Resistance vs. Gate Voltage and
Drain Current
10
Pulse Duration=80 s
8 Duty Cycle = 0.5% Max
6 VGS=10V
4
VGS=20V
2
0
03
6
9 12 15
Drain Current, ID (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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