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PDF TBN4226 Data sheet ( Hoja de datos )
| Número de pieza | TBN4226 | |
| Descripción | Si NPN Transistor | |
| Fabricantes | AUK | |
| Logotipo |  |
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Semiconductor
□ Applications
- VHF and UHF low noise amplifier
- Wide band amplifier
□ Features
- High gain bandwidth product
fT = 6 GHz at VCE = 3 V, IC = 7 mA
fT = 8 GHz at VCE = 3 V, IC = 30 mA
- High power gain
|S21|2 = 9.0 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz
- Low noise figure
NF = 1.2 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz
TBN4226 Series
Si NPN Transistor
SOT-323
Unit in mm
2.1±0.1
1.25±0.05
1
3
2
0.1 Min.
Pin Configuration
1. Base
2. Emitter
3. Collector
□ Absolute Maximum Ratings (TA = 25 ℃)
Param eter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Sym bol
BVCBO
BVCEO
BVEBO
IC
Ptot
Tj
Tstg
Caution : Electro Static Discharge sensitive device
Ratings
20
8
3
100
150
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
1
1 page  
TBN4226 Series
Maximum Available Gain
vs. Collector Current
20
18 VCE = 3 V
f = 1GHz
16
14
12
10
8
6
4
2
0
1 10
Collector Current, I (mA)
C
100
Noise Figure
vs. Collector Current
6
5
VCE = 3 V
f = 1 GHz
4
3
2
1
0
0.1 1 10 100
Collector Current, IC (mA)
Noise Parameter vs. Frequency
Frequency
(GHz)
0.9
1.0
1.5
2.0
Fmin (dB)
1.27
1.16
1.79
1.91
rn
0.11
0.09
0.08
0.11
Γopt
Mag Phase
0.290
144.4
0.301
141.3
0.436
-162.9
0.543
-143.2
Association gain
(dB)
11.58
10.60
8.13
6.45
Gmax
(dB)
12.98
11.83
8.57
6.89
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TBN4226.PDF ] | |
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