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ST Microelectronics - (NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory

Numéro de référence NAND04GW3C2A
Description (NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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NAND04GW3C2A fiche technique
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NAND04GA3C2A
NAND04GW3C2A
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
Features
High density multi-level Cell (MLC) NAND
Flash memories:
– Up to 128 Mbit spare area
– Cost effective solutions for mass storage
applications
NAND interface
– x8 bus width
– Multiplexed Address/ Data
Supply voltages
– VDD = 2.7 to 3.6V core supply voltage for
Program, Erase and Read operations.
– VDDQ = 1.7 to 1.95 or 2.7 to 3.6V for I/O
buffers.
Page size: (2048 + 64 spare) Bytes
Block size: (256K + 8K spare) Bytes
Page Read/Program
– Random access: 60µs (max)
– Sequential access: 60ns(min)
– Page Program Operation time: 800µs (typ)
Cache Read mode
– Internal Cache Register to improve the
read throughput
Fast Block Erase
– Block erase time: 1.5ms (typ)
Status Register
Electronic Signature
Serial Number option
Table 1. Product List
Reference
Part Number
NAND04Gx3C2A
NAND04GA3C2A
NAND04GW3C2A
TSOP48 12 x 20mm
Chip Enable ‘don’t care’
– for simple interface with microcontroller
Data Protection
– Hardware Program/Erase locked during
power transitions
Embedded Error Correction Code (ECC)
– Internal ECC accelerator
– Easy ECC Command Interface
Data integrity
– 10,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
ECOPACK® package available
Development tools
– Bad Blocks Management and Wear
Leveling algorithms
– File System OS Native reference software
– Hardware simulation models
Density
4 Gbits
November 2006
Rev 2
1/51
www.st.com
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