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PDF MBR41H100CT Data sheet ( Hoja de datos )

Número de pieza MBR41H100CT
Descripción SWITCHMODE Power Rectifier
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MBR41H100CT,
MBRB41H100CT,
MBRB41H100CT−1
SWITCHMODEt
Power Rectifier
100 V, 40 A
Features and Benefits
Low Forward Voltage: 0.67 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
Guard−Ring for Stress Protection
Pb−Free Packages are Available
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220AB)
1.7 Grams (D2PAK)
1.5 Grams (TO−262)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Please See the Table on the Following Page
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
http://onsemi.com
1
2, 4
3
4 MARKING
DIAGRAMS
1
2
3
TO−220AB
CASE 221A
PLASTIC
STYLE 6
AYWW
B41H100G
AKA
1
3
4 D2PAK
CASE 418B
STYLE 3
AYWW
B41H100G
AKA
4
I2PAK (TO−262)
CASE 418D
PLASTIC
STYLE 3
AYWW
B41H100G
AKA
1 23
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
Device
Package Shipping
MBR41H100CT
TO−220 50 Units/Rail
MBR41H100CTG
TO−220 50 Units/Rail
(Pb−Free)
MBRB41H100CT−1G TO−262 50 Units/Rail
(Pb−Free)
MBRB41H100CTT4G D2PAK
(Pb−Free)
800/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBR41H100CT/D

1 page




MBR41H100CT pdf
MBR41H100CT, MBRB41H100CT, MBRB41H100CT−1
MERCURY
SWITCH
S1
+VDD
IL 10 mH COIL
ID
DUT
VD
IL
t0
BVDUT
ID
VDD
t1 t2 t
Figure 10. Test Circuit
The unclamped inductive switching circuit shown in
Figure 10 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
Figure 11. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ ǓWAVAL [
1
2
LI
2
LPK
BVDUT
BVDUT–VDD
EQUATION (2):
WAVAL
[
1
2
LI
2
LPK
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