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PDF MBR160 Data sheet ( Hoja de datos )
| Número de pieza | MBR160 | |
| Descripción | (MBR150 / MBR160) Axial Lead Rectifiers | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR160 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBR150/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag
• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the
part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: B150, B160
MBR150
MBR160
MBR160 is a
Motorola Preferred Device
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
50, 60 VOLTS
CASE 59–04
PLASTIC
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Forward Current (2)
v(VR(equiv) 0.2 VR(dc), TL = 90°C, RθJA = 80°C/W, P.C. Board Mounting,
see Note 3, TA = 55°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C)
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
THERMAL CHARACTERISTICS (Notes 3 and 4)
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Maximum Instantaneous Forward Voltage (1)
(iF = 0.1 A)
(iF = 1 A)
(iF = 3 A)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
(TL = 25°C)
(TL = 100°C)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
TJ, Tstg
TJ(pk)
Symbol
RθJA
Symbol
vF
iR
MBR150
50
MBR160
60
35 42
1
25 (for one cycle)
* 65 to +150
150
Max
80
Max
0.550
0.750
1.000
0.5
5
Unit
Volts
Volts
Amp
Amps
°C
°C
Unit
°C/W
Unit
Volt
mA
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 1
©RMeoctotriofilea,rInDce. 1v9ic96e Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBR160.PDF ] | |
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