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PDF MBD701 Data sheet ( Hoja de datos )
| Número de pieza | MBD701 | |
| Descripción | Silicon Hot-Carrier Diodes | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Silicon Hot –Carrier Diodes
These devices are designed primarily for high–efficiency UHF
and VHF detector applications. They are readily adaptable to many
other fast switching RF and digital applications. They are supplied
in an inexpensive plastic package for low–cost,high–volume
consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ V R = 20 V
• High Reverse Voltage – to 70 Volts
• Low Reverse Leakage – 200 nA (Max)
MBD701
MMBD701LT1
70 VOLTS
HIGH-VOLTAGE
SILICON HOT-CARRIER
DETECTOR AND SWITCHING
DIODES
3
CATHODE
1
ANODE
3
1
2
CASE 318–08, STYLE8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
MBD701 MMBD701LT1
Rating
Symbol
Value
Reverse Voltage
VR
70
Forward Power Dissipation
PF
@ T A = 25°C
280 200
Derate above 25°C
2.8 2.0
Operating Junction
TJ
Temperature Range
–55 to +125
Storage Temperature Range
T stg
–55 to +150
Unit
Volts
mW
mW/°C
°C
°C
DEVICE MARKING
MMBD701LT1 = 5H
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol Min
typ Max Unit
Reverse Breakdown Voltage (I R = 10µAdc)
V (BR)R
70
— — Volts
Total Capacitance (V R = 20 V, f = 1.0 MHz) Figure 1
CT
—
0.5 1.0
pF
Reverse Leakage (V R = 35 V) Figure 3
I R — 9.0 200 nAdc
Forward Voltage (I F = 1.0 mAdc) Figure 4
V F — 0.42 0.5 Vdc
Forward Voltage (I F = 10 mAdc) Figure 4
V F — 0.7 1.0 Vdc
NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk.
G18–1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBD701.PDF ] | |
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