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PDF MAC16HCD Data sheet ( Hoja de datos )
| Número de pieza | MAC16HCD | |
| Descripción | (MAC16HCx) Triacs Silicon Bidirectional Thyristors | |
| Fabricantes | ON Semiconductor | |
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MAC16HCD, MAC16HCM,
MAC16HCN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full−wave,
silicon gate−controlled devices are needed.
Features
• High Commutating di/dt and High Immunity to dv/dt @ 125°C
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
• Blocking Voltage to 800 Volts
• On−State Current Rating of 16 Amperes RMS at 80°C
• High Surge Current Capability − 150 Amperes
• Industry Standard TO−220AB Package for Ease of Design
• Glass Passivated Junctions for Reliability and Uniformity
• Pb−Free Packages are Available*
http://onsemi.com
TRIACS
16 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC16HCD
MAC16HCM
MAC16HCN
VDRM,
VRRM
400
600
800
V
On−State RMS Current
(Full Cycle Sine Wave 50 to 60 Hz;
TC = 80°C)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.33 ms)
IT(RMS)
ITSM
I2t
16 A
150 A
93 A2sec
Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
123
MAC16HCxG
AYWW
TO−220AB
CASE 221A−09
STYLE 4
x = D, M, or N
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC16HCD
TO−220AB
50 Units / Rail
MAC16HCDG
MAC16HCM
TO−220AB
(Pb−Free)
TO−220AB
50 Units / Rail
50 Units / Rail
MAC16HCMG
MAC16HCN
TO−220AB
(Pb−Free)
TO−220AB
50 Units / Rail
50 Units / Rail
MAC16HCNG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 1
1
Publication Order Number:
MAC16HC/D
1 page  
100
TYPICAL @
TJ = 25°C
10
MAC16HCD, MAC16HCM, MAC16HCN
1
MAXIMUM @ TJ = 125°C
0.1
MAXIMUM @ TJ = 25°C
1
0.1
0 0.5 1 1.5 2 2.5 3 3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 7. Typical On-State Characteristics
0.01
0.1
1 10 100 1000 10000
t, TIME (ms)
Figure 8. Typical Thermal Response
http://onsemi.com
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MAC16HCD.PDF ] | |
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| MAC16HCM | (MAC16HCx) Triacs Silicon Bidirectional Thyristors | ON Semiconductor |
| MAC16HCN | (MAC16HCx) Triacs Silicon Bidirectional Thyristors | ON Semiconductor |
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