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Número de pieza | HD74HCT1G04 | |
Descripción | High speed CMOS inverter using silicon gate CMOS process | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
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HD74HCT1G04
Inverter
ADE-205-303B (Z)
3rd. Edition
April 2001
Description
The HD74HCT1G04 is high speed CMOS inverter using silicon gate CMOS process. With CMOS low
power dissipation, it provides high speed equivalent to LS–TTL series. The internal circuit of three stages
construction with buffer provides wide noise margin and stable output.
Features
• The basic gate function is lined up as hitachi uni logic series.
• Supplied on emboss taping for high speed automatic mounting.
• TTL compatible input level.
Supply voltage range : 4.5 to 5.5 V
Operating temperature range : –40 to +85°C
• |IOH| = IOL = 2 mA (min)
Outline and Article Indication
• HD74HCT1G04
Index band
Marking
F5
CMPAK–5
= Control code
( or blank)
1 page HD74HCT1G04
Switching Characteristics
Item
Symbol Ta = 25°C
Min Typ
Output rise / fall time
t TLH
t THL
—
Propagation delay time tPLH
—
tPHL —
(CL = 15 pF, tr = tf = 6 ns, VCC = 5 V)
6
7.5
10
Max
10
12
17
Unit Test Conditions
ns Test circuit
ns Test circuit
Item
Symbol
Ta = 25°C
Ta = –40 to 85°C Unit Test Conditions
VCC Min Typ Max Min Max
Output rise / fall time
t TLH
t THL
4.5 — 14 25 —
31 ns Test circuit
Propagation delay time tPLH
4.5 — 11.2 16 —
20 ns Test circuit
t PHL
4.5 — 16.4 27 —
31
Input capacitance
CIN
— — 2.5 5 —
5
pF
Equivalent capacitance CPD
— — 10 — —
— pF
(CL = 50 pF, tr = tf = 6 ns)
Note: CPD is equivalent capacitance inside of the IC calculated from the operating current without load (see
test circuit). The average operating current without load is calculated according to the expression
below.
ICC (opr) = CPD • VCC • fIN + ICC
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HD74HCT1G04.PDF ] |
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