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PDF BAS21HT1 Data sheet ( Hoja de datos )
| Número de pieza | BAS21HT1 | |
| Descripción | High Voltage Switching Diode | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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BAS21HT1
Preferred Device
High Voltage
Switching Diode
Features
• Pb−Free Packages are Available
http://onsemi.com
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR Continuous Reverse Voltage
VRRM Repetitive Peak Reverse Voltage
IF Peak Forward Current
IFM(surge) Peak Forward Surge Current
THERMAL CHARACTERISTICS
250 Vdc
250 Vdc
200 mAdc
625 mAdc
Symbol
Characteristic
Max Unit
PD Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
200 mW
1.57 mW/°C
RqJA
Thermal Resistance,
Junction−to−Ambient
635 °C/W
TJ, Tstg Junction and Storage Temperature
Range
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 Minimum Pad
HIGH VOLTAGE
SWITCHING DIODE
1
CATHODE
2
ANODE
MARKING
2 DIAGRAM
1 SOD−323
CASE 477
STYLE 1
JS M G
G
JS = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAS21HT1
BAS21HT1G
SOD−323
SOD−323
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 4
1
Publication Order Number:
BAS21HT1/D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAS21HT1.PDF ] | |
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