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PDF BAS20LT1 Data sheet ( Hoja de datos )
| Número de pieza | BAS20LT1 | |
| Descripción | (BAS19LT1 - BAS21xxx1) High Voltage Switching Diode | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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BAS19LT1, BAS20LT1,
BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage
Switching Diode
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
BAS19
BAS20
BAS21
VR
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
VRRM
Continuous Forward Current
Peak Forward Surge Current
Junction and Storage Temperature
Range
IF
IFM(surge)
TJ, Tstg
Power Dissipation (Note 1)
Electrostatic Discharge
PD
ESD
Value
120
200
250
120
200
250
200
625
−55 to
+150
385
HM < 500
Unit
Vdc
Vdc
mAdc
mAdc
°C
mW
V
MM < 400
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
SOT−23
31
CATHODE
ANODE
SC−88A
5
CATHODE
1
ANODE
4
CATHODE
3
ANODE
MARKING DIAGRAMS
33
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
Jx M G
G
12
54
3
1
SC−88A (SOT−353)
CASE 419A
Jx M G
G
12 3
x = P, R, or S
P = BAS19LT1
R = BAS20LT1
S = BAS21LT1 or BAS21DW5T1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 9
1
Publication Order Number:
BAS19LT1/D
1 page  
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
PACKAGE DIMENSIONS
E
A
A1
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
3
12
e
SEE VIEW C
HE
b
c
0.25
q
L
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
MILLIMETERS
DIM MIN
NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e 1.78 1.90 2.04
L 0.10
0.20
0.30
L1 0.35
0.54
0.69
HE 2.10 2.40 2.64
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BAS20LT1.PDF ] | |
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