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Motorola Semiconductors - (2N6426 / 2N6427) Darlington Transistors(NPN Silicon)

Numéro de référence 2N6426
Description (2N6426 / 2N6427) Darlington Transistors(NPN Silicon)
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N6426 fiche technique
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6426/D
Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
2N6426 *
2N6427
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40 Vdc
40 Vdc
12 Vdc
500 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
Rq JA 200 °C/W
Thermal Resistance, Junction to Case
Rq JC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1)
(IC = 10 mAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100 m Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 m Adc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 m s; Duty Cycle 2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Typ Max Unit
40 — — Vdc
40 — — Vdc
12 — — Vdc
— — 1.0 m Adc
— — 50 nAdc
— — 50 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

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