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PDF MA5104 Data sheet ( Hoja de datos )
| Número de pieza | MA5104 | |
| Descripción | RADIATION HARD 4096 x 1 BIT STATIC RAM | |
| Fabricantes | Zarlink Semiconductor | |
| Logotipo |  |
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1 page  
MA5104
Symbol
FT
Parameter
Basic Functionality
Conditions
VDD = 4.5V - 5.5V, FREQ = 1MHz
V
IL
=
V,
SS
V
IH
=
V,
DD
V
OL
≤
1.5V,
V
OH
≥
1.5V
TEMP = -55°C to +125°C, GPS PATTERN SET
GROUP A SUBGROUPS 7, 8A, 8B
Figure 9: Functionality
Subgroup
1
2
3
7
8A
8B
9
10
11
Definition
Static characteristics specified in Tables 4 and 5 at +25°C
Static characteristics specified in Tables 4 and 5 at +125°C
Static characteristics specified in Tables 4 and 5 at -55°C
Functional characteristics specified in Table 9 at +25°C
Functional characteristics specified in Table 9 at +125°C
Functional characteristics specified in Table 9 at -55°C
Switching characteristics specified in Tables 6 and 7 at +25°C
Switching characteristics specified in Tables 6 and 7 at +125°C
Switching characteristics specified in Tables 6 and 7 at -55°C
Figure 10: Definition of Subgroups
4
5 Page 
MA5104
RADIATION TOLERANCE
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample
devices from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
GEC Plessey Semiconductors can provide radiation
testing compliant with MIL-STD-883 test method 1019,
Ionizing Radiation (Total Dose).
Total Dose (Function to specification)*
1x105 Rad(Si)
Transient Upset (Stored data loss)
5x1010 Rad(Si)/sec
Transient Upset (Survivability)
>1x1012 Rad(Si)/sec
Neutron Hardness (Function to specification) >1x1015 n/cm2
Single Event Upset**
3.4x10-9 Errors/bit day
Latch Up
Not possible
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
Figure 16: Radiation Hardness Parameters
SINGLE EVENT UPSET CHARACTERISTICS
UPSET BIT
CROSS-SECTION
(cm2/bit)
Ion LET (MeV.cm2/mg)
Figure 17: Typical Per-Bit Upset Cross-Section vs Ion LET
10
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MA5104.PDF ] | |
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