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Motorola Semiconductors - (2N6040 - 2N6045) COMPLEMENTARY SILICON POWER TRANSISTORS

Numéro de référence 2N6045
Description (2N6040 - 2N6045) COMPLEMENTARY SILICON POWER TRANSISTORS
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N6045 fiche technique
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6040/D
Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mAdc —
VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043
VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044
VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
2N6040 2N6041 2N6042
Symbol 2N6043 2N6044 2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
VCEO
VCB
VEB
IC
60
60
80 100
80 100
5.0
8.0
16
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
120
75
0.60
Operating and Storage Junction,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) IndicatesJEDECRegisteredData.
Symbol
θJC
θJA
Max
1.67
57
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_ C
_C
Unit
_ C/W
_ C/W
TA TC
4.0 80
PNP
2N6040
thru
2N6042 *
NPN
2N6043
thru
2N6045 *
*Motorola Preferred Device
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 – 100 VOLTS
75 WATTS
CASE 221A–06
TO–220AB
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la97r Power Transistor Device Data
1

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