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PDF 2N5684 Data sheet ( Hoja de datos )
| Número de pieza | 2N5684 | |
| Descripción | (2N5684 / 2N5686) High-Current Complementary Silicon Power Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5684 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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ON Semiconductort
High−Current Complementary
Silicon Power Transistors
. . . designed for use in high−power amplifier and switching circuit
applications.
• High Current Capability −
IC Continuous = 50 Amperes.
• DC Current Gain −
hFE = 15−60 @ IC = 25 Adc
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
2N5684
2N5686
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
VCEO
VCB
VEB
IC
IB
PD
80
80
5.0
50
15
300
1.715
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
−65 to + 200
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
Symbol
θJC
Max
0.584
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
(1) Indicates JEDEC Registered Data.
300
PNP
2N5684
NPN
2N5686
50 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 −80 VOLTS
300 WATTS
CASE 197A−05
TO−204AE
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 11
1
Publication Order Number:
2N5684/D
1 page  
2N5684 2N5686
PACKAGE DIMENSIONS
E
V
H
CASE 197A−05
TO−204AE
ISSUE J
A
N
C
−T− SEATING
PLANE
D 2 PL
K
0.30 (0.012) M T Q M Y M
U
L
−Y−
2
GB
1
−Q−
0.25 (0.010) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 1.530 REF
B 0.990 1.050
C 0.250 0.335
D 0.057 0.063
E 0.060 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N 0.760 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
38.86 REF
25.15 26.67
6.35 8.51
1.45 1.60
1.53 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
19.31 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N5684.PDF ] | |
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