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RMPA1765 fiches techniques PDF

Fairchild Semiconductor - Power Edge Power Amplifier Module

Numéro de référence RMPA1765
Description Power Edge Power Amplifier Module
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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RMPA1765 fiche technique
March 2005
RMPA1765
K-PCS, CDMA, CDMA2000-1X and WCDMA
Power Edge™ Power Amplifier Module
Features
Single positive-supply operation and low power and
shutdown modes
38% CDMA/WCDMA efficiency at +28 dBm average output
power
Compact lead-free compliant LCC package-
3.0 x 3.0 x 1.0 mm with industry standard pinout
Internally matched to 50 Ohms and DC blocked RF
input/output.
Meets CDMA2000-1XRTT/WCDMA performance require-
ments
Device
General Description
The RMPA1765 power amplifier module (PAM) is designed for
Korean CDMA, CDMA2000-1X and WCDMA personal commu-
nications system (PCS) applications. The 2 stage PAM is inter-
nally matched to 50 Ohms to minimize the use of external
components and features a low-power mode to reduce standby
current and DC power consumption during peak phone usage.
High power-added efficiency and excellent linearity are
achieved using Fairchild RF’s InGaP Heterojunction Bipolar
Transistor (HBT) process.
Functional Block Diagram
PA MODULE
(Top View)
Vcc1 1
MMIC
RF IN
2
Input
Match
Vmode 3
DC Bias Control
Vref 4
8 Vcc2
Output
Match
7
RF OUT
6 GND
5 GND
(paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
RMPA1765 Rev. D
1
www.fairchildsemi.com

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