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PDF NE687M23 Data sheet ( Hoja de datos )
| Número de pieza | NE687M23 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE687M23
FEATURES
• NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 5.5 GHz
• LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
DESCRIPTION
The NE687M23 transistor is designed for low noise, high gain,
and low cost requirements. This high fT part is well suited for
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/ceramic substrate style "M23" package is ideal for
today's portable wireless applications. The NE687 is also
available in six different low cost plastic surface mount pack-
age styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M23
0.5
1 0.25
0.4
2 3 0.25
0.6
0.15
0.2 0.15
BOTTOM VIEW
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
fT
NF
|S21E|2
hFE2
ICBO
IEBO
CRE3
Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz
Forward Current Gain at VCE = 2 V, IC = 20 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 0.5 V, IE = 0, f = 1 MHz
GHz
dB
dB
µA
µA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE687M23
2SC5653
M23
MIN TYP MAX
5.5
1.5
4.5
70 130
0.1
0.1
0.8
California Eastern Laboratories
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| PDF Descargar | [ Datasheet NE687M23.PDF ] | |
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