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Numéro de référence | K7Q161864B | ||
Description | (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM | ||
Fabricant | Samsung semiconductor | ||
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K7Q163664B
K7Q161864B
Document Title
512Kx36-bit, 1Mx18-bit QDRTM SRAM
Revision History
Rev. No.
History
0.0 1. Initial document.
1.0 1. Final spec release
512Kx36 & 1Mx18 QDRTM b4 SRAM
Draft Date
Jan. 27, 2004
Mar. 18, 2004
Remark
Advance
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - Mar. 2004
Rev 1.0
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Pages | Pages 17 | ||
Télécharger | [ K7Q161864B ] |
No | Description détaillée | Fabricant |
K7Q161864B | (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM | Samsung semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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