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PDF IRHNJ63134 Data sheet ( Hoja de datos )
| Número de pieza | IRHNJ63134 | |
| Descripción | (IRHNJ67134 / IRHNJ67134) RADIATION HARDENED POWER MOSFET SURFACE-MOUNT | |
| Fabricantes | International Rectifier | |
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PD-96931A
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ67134 100K Rads (Si)
IRHNJ63134 300K Rads (Si)
RDS(on)
0.088Ω
0.088Ω
ID
19A
19A
IRHNJ67134
150V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
SMD-0.5
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
19
12
76
75
0.6
±20
60
19
7.5
8.6
-55 to 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
02/03/05
1 page  
Pre-Irradiation
IRHNJ67134
2800
2400
2000
1600
1200
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
800
400 Crss
0
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 19A
16
VDS = 120V
VDS = 75V
VDS = 30V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
60
100
TJ = 150°C
10
1
TJ = 25°C
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µs
1 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100 1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHNJ63134.PDF ] | |
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