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FFPF10H60S fiches techniques PDF

Fairchild Semiconductor - Hyperfast Recovery Power Rectifier

Numéro de référence FFPF10H60S
Description Hyperfast Recovery Power Rectifier
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FFPF10H60S fiche technique
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FFPF10H60S
Hyperfast Recovery Power Rectifier
January 2007
tm
Features
• High Speed Switching ( trr=25ns(Typ.) @ IF=10A )
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
• Low Forward Voltage( VF=2.1V(Typ.) @ IF=10A )
Applications
• General Purpose
• Switching Mode Power Supply
• Free-wheeling diode for motor application
• Power switching circuits
General Description
The FFPF10H60S is hyperfast rectifier (trr=25ns(Typ.) @
IF=10A). it has half the recovery time of ultrafast rectifier and is
silicon nitride passivated ion-implanted epitaxial planar con-
struction.
This device is intended for use as freewheeling/clamping rectifi-
ers in a variety of switching power supplies and other power
swithching applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transis-
tors.
Pin Assignments
TO-220F-2L
12
Marking:F10H60S
1. Cathode
2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 85 °C
Operating Junction and Storage Temperature
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking Device
F10H60S
FFPF10H60STU
Package
TO-220F
Reel Size
-
Value
600
600
600
10
100
- 65 to +150
Max
3.4
Tape Width
-
Units
V
V
V
A
A
°C
Units
°C/W
Quantity
50
©2006 Fairchild Semiconductor Corporation
FFPF10H60S Rev. A
1
www.fairchildsemi.com

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