PDF ZXTN25060BZ Data sheet ( Hoja de datos )

Número de pieza	ZXTN25060BZ
Descripción	NPN medium power transistor
Fabricantes	Zetex Semiconductors
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No Preview Available ! www.DataSheet4U.com ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC(cont) = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Extremely low equivalent on resistance; RCE(sat) = 46m⍀ at 5A • 5 amps continuous current • Up to 10 amps peak current • Very low saturation voltages • Excellent hFE characteristics • 6V reverse blocking capability Applications • Emergency lighting circuits • Motor driving (including DC fans) • Solenoid, relay and actuator drivers • DC-DC modules • Backlight inverters • Power switches • MOSFET gate drivers Ordering information C B E E CC B Pinout - top view Device ZXTN25060BZTA Reel Size (inches) 7 Tape width (mm) 12 Quantity per reel 1000 Device marking 1C7 Issue 3 - January 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com 1 page ZXTN25060BZ Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Symbol Min. BVCBO 150 BVCEX 150 Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (reverse blocking) BVCEO BVEBO BVECX 60 7 6 Emitter-collector breakdown BVECO voltage (base open) 6 Typ. 190 190 80 8 8 7 Max. Unit Conditions V IC = 100␮A IC = 100␮A, RBE Յ1k⍀ or -1V < VBE < 0.25V V IC = 10mA () V IE = 100␮A V IE = 100␮A, RBC Յ1k⍀ or 0.25V > VBC > -0.25V V IE = 100␮A, Collector-base cut-off current ICBO <1 50 nA VCB = 120V 20 ␮A VCB = 120V, Tamb= 100°C Collector-emitter cut-off current ICEX - 100 nA VCE = 120V; RBE Յ1k⍀ or -1V < VBE < 0.25V Emitter-base cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 55 70 mV IC = 1A, IB = 100mA() 70 90 mV IC = 1A, IB = 50mA() 185 230 mV IC = 4A, IB = 400mA() 240 305 mV IC = 5A, IB = 500mA() Base-emitter saturation voltage VBE(sat) 1020 1100 mV IC = 5A, IB = 500mA() Base-emitter turn-on voltage VBE(on) 960 1050 mV IC = 5A, VCE = 2V() Static forward current transfer hFE ratio 100 200 300 90 180 IC = 10mA, VCE = 2V() IC = 1A, VCE = 2V() 45 90 IC = 2A, VCE = 2V() 20 IC = 5A, VCE = 2V() Transition frequency fT 185 MHz IC = 100mA, VCE = 5V f = 100MHz Output capacitance Delay time Rise time Storage time Fall time COBO td tr ts tf 11.5 20 16 15 509 57 pF VCB = 10V, f = 1MHz() ns VCC = 10V. IC = 500mA, ns IB1 = IB2= 50mA. ns ns NOTES: (*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%. Issue 3 - January 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com 5 Page

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