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Zetex Semiconductors - 60V SOT223 N-channel enhancement mode MOSFET

Numéro de référence ZXMN6A08G
Description 60V SOT223 N-channel enhancement mode MOSFET
Fabricant Zetex Semiconductors 
Logo Zetex Semiconductors 





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ZXMN6A08G fiche technique
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ZXMN6A08G
60V SOT223 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
60
RDS(on) ()
0.080 @ VGS = 10V
0.150 @ VGS = 4.5V
ID (A)
5.3
2.8
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package
D
G
S
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device
ZXMN6A08GTA
ZXMN6A08GTC
Reel size
(inches)
7
13
Tape width
(mm)
12
12
Quantity per
reel
1,000
4,000
S
DD
G
Pinout - top view
Device marking
ZXMN
6A08
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com

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