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Numéro de référence | MBM29DL161TE | ||
Description | (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation | ||
Fabricant | Fujitsu Media Devices | ||
Logo | |||
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20880-1E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT Dual Operation
MBM29DL16XTE/BE -70/90/12
s FEATURES
• 0.23 µm Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table 1)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
s PRODUCT LINE UP
(Continued)
Part No.
Ordering Part No.
VCC = 3.3 V
+0.3 V
–0.3 V
VCC = 3.0 V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
MBM29DL16XTE/BE
70 — —
— 90 12
70 90 120
70 90 120
30 35 50
s PACKAGES
48-pin plastic TSOP (I)
Marking Side
48-pin plastic TSOP (I)
48-pin plastic FBGA
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)
(BGA-48P-M11)
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Pages | Pages 30 | ||
Télécharger | [ MBM29DL161TE ] |
No | Description détaillée | Fabricant |
MBM29DL161TD | (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT | Fujitsu Media Devices |
MBM29DL161TD-70 | FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT | Fujitsu |
MBM29DL161TD-90 | FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT | Fujitsu |
MBM29DL161TE | (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation | Fujitsu Media Devices |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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