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Numéro de référence | EMF33 | ||
Description | Dual-chip Bipolar Transistor | ||
Fabricant | ROHM Semiconductor | ||
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Transistors
Power management,
Dual-chip Bipolar Transistor
EMF33
EMF33
zApplications
Power management circuit
zFeatures
1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are
housed independently in the EMT6 package.
2) Power switching circuit in a single package.
3) Mounting cost and area can be cut in half.
zStructure
Epitaxial Plannar Silicon Transistor
zDimensions (Unit : mm)
EMT6
1.6
1.0
0.5 0.5
(6) (5) (4)
0.5
1pin mark (1) (2) (3)
0.22
0.13
Each lead has same dimensions
Abbreviated symbol : F33
zPackaging specifications
zEquivalent circuit
Type
EMF33
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
<Tr1>
Parameter
Symbol
Supply voltage
VCC
Input voltage
Collector current
∗ Characteristics of built-in transistor.
VIN
IC(max) ∗
Limits
−12
−10 to +5
−500
<Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continous
Pulsed
Continous
Reverse drain current
Pulsed
∗ PW≤10ms DUTY CYCLE≤50%
Symbol
VDSS
VGSS
ID
IDP ∗
IDR
IDRP ∗
Limits
30
±20
100
200
100
200
Unit
V
V
mA
Unit
V
V
mA
mA
mA
mA
(6) (5)
(4)
∗1
Tr1
R2
R1
(1) (2)
∗1 ESD protection diode
∗2 Body diode
Tr1 : R1/R2=1kΩ/10kΩ
Tr2 : MOS FET
Tr2
∗2
(1) Emitter
(2) Base
(3)
(3) Drain
(4) Source
(5) Gate
(6) Collector
<Tr1, Tr2 in common>
Parameter
Power dissipation
Symbol
PD ∗
Junction temperature
Tj
Range of storage temperature
Tstg
∗ Each terminal mounted on a recommended land.
Limits
150
120
150
−55 to +150
Unit
mW / TOTAL
mW / ELEMENT
°C
°C
1/2
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Pages | Pages 3 | ||
Télécharger | [ EMF33 ] |
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