|
|
Numéro de référence | RB557W | ||
Description | Schottky barrier diode | ||
Fabricant | Diodes Incorporated | ||
Logo | |||
1 Page
www.DataSheet4U.com
Diodes
Schottky barrier diode
RB557W
RB557W
zApplications
General rectification
zFeatures
1) Ultra small mold type. (EMD3)
2) Low VF
3) High reliability
zConstruction
Silicon epitaxial planar
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
1.6±0.2
0.3±0.1
0.05
(3)
0.15±0.05
0.5 0.5
0.7
0.2±0.1
-0.05
(2)
0.5 0.5
1.0±0.1
(1)
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
0~0.1
0.55±0.1
0.7±0.1
0.6
EMD3
zStructure
0.6
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
0
0.3±0.1
1.8±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak (60Hz・1cyc)(*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
VR
Io
IFSM
Tj
Tstg
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF1 - - 0.35
VF2 - - 0.49
IR - - 10
φ0.5±0.1
Limits
30
100
500
125
-40 to +125
Unit
V
mA
mA
℃
℃
Unit Conditions
V IF=10mA
V IF=100mA
µA VR=10V
0.9±0.2
1/3
|
|||
Pages | Pages 4 | ||
Télécharger | [ RB557W ] |
No | Description détaillée | Fabricant |
RB557W | Schottky barrier diode | Diodes Incorporated |
RB557WFH | Schottky Barrier Diode | ROHM Semiconductor |
RB557WM | Schottky Barrier Diode | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |