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Diodes Incorporated - Schottky barrier diode

Numéro de référence RB557W
Description Schottky barrier diode
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





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RB557W fiche technique
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Diodes
Schottky barrier diode
RB557W
RB557W
zApplications
General rectification
zFeatures
1) Ultra small mold type. (EMD3)
2) Low VF
3) High reliability
zConstruction
Silicon epitaxial planar
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
1.6±0.2
0.3±0.1
    0.05
(3)
0.15±0.05
0.5 0.5
0.7
0.2±0.1
  -0.05
(2)
0.5 0.5
1.0±0.1
(1)
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
0~0.1
0.55±0.1
0.7±0.1
0.6
EMD3
zStructure
0.6
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
      0
0.3±0.1
1.8±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current*1
Forward current surge peak 60Hz1cyc)(*1
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
VR
Io
IFSM
Tj
Tstg
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF1 - - 0.35
VF2 - - 0.49
IR - - 10
φ0.5±0.1
Limits
30
100
500
125
-40 to +125
Unit
V
mA
mA
Unit Conditions
V IF=10mA
V IF=100mA
µA VR=10V
0.9±0.2
1/3

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