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Hynix Semiconductor - (HY5V66ExF6x) CMOS Synchronous DRAM

Numéro de référence HY5V66ELF6
Description (HY5V66ExF6x) CMOS Synchronous DRAM
Fabricant Hynix Semiconductor 
Logo Hynix Semiconductor 





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HY5V66ELF6 fiche technique
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64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
Document Title
4Bank x 1M x 16bits Synchronous DRAM
Revision History
Revision No.
History
0.01 Initial Draft
1. Editorial chage
0.80Typ --> 0.45 +/-0.05 (page12, Ball Dimension)
Before dimension :
Draft Date
Dec. 2004
Remark
Preliminary
0.80 Typ.
0.2 After dimension :
0.65 Typ.
June. 2005
Preliminary
0.450 +/- 0.05
0.65 Typ.
2. Added
Speed Product(100MHz CL2) (see to Page 02)
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.2 / June. 2005
1

PagesPages 12
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