|
|
PDF HY5V66EF6 Data sheet ( Hoja de datos )
| Número de pieza | HY5V66EF6 | |
| Descripción | (HY5V66ExF6x) CMOS Synchronous DRAM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HY5V66EF6 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
Document Title
4Bank x 1M x 16bits Synchronous DRAM
Revision History
Revision No.
History
0.01 Initial Draft
1. Editorial chage
0.80Typ --> 0.45 +/-0.05 (page12, Ball Dimension)
Before dimension :
Draft Date
Dec. 2004
Remark
Preliminary
0.80 Typ.
0.2 After dimension :
0.65 Typ.
June. 2005
Preliminary
0.450 +/- 0.05
0.65 Typ.
2. Added
Speed Product(100MHz CL2) (see to Page 02)
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.2 / June. 2005
1
1 page  
www.DataSheet4U.com
11Preliminary
Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY5V66E(L)F6(P) Series
BASIC FUNCTIONAL DESCRIPTION
Mode Register
BA1 BA0 A11 A10
0000
A9
OP Code
A8 A7 A6 A5 A4 A3 A2 A1 A0
00
CAS Latency BT Burst Length
OP Code
A9
0
1
Write Mode
Burst Read and Burst Write
Burst Read and Single Write
Burst Type
A3 Burst Type
0 Sequential
1 Interleave
CAS Latency
A6 A5 A4
000
001
010
011
100
101
110
111
CAS Latency
Reserved
1
2
3
Reserved
Reserved
Reserved
Reserved
Burst Length
A2 A1 A0
00 0
00
01
1
0
01 1
10 0
10 1
1 10
1 11
Burst Length
A3 = 0
A3=1
11
22
44
88
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Full Page
Reserved
Rev. 0.2 / June. 2005
5
5 Page 
www.DataSheet4U.com
11Preliminary
Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY5V66E(L)F6(P) Series
COMMAND TRUTH TABLE
Command
CKEn-1 CKEn CS RAS CAS WE DQM ADDR A10/AP BA Note
Mode Register Set
H X LLLLX
OP code
No Operation
HX XX
HX
X
LHHH
X
Bank Active
H X L L H H X RA V
Read
L
H X L H L H X CA
V
Read with Autoprecharge
H
Write
L
H X L H L L X CA
V
Write with Autoprecharge
H
Precharge All Banks
Precharge selected Bank
H
X LLHLX
X
HX
LV
Burst Stop
H X LHHL X
X
DQM
H X VX
Auto Refresh
H H LL LHX
X
Burst-Read-Single-WRITE
H
X LLLLX
A9 ball High
(Other balls OP code)
MRS
Mode
Entry H L L L L H X
Self Refresh1
Exit
HX XX
LH
X
LHHH
X
HX XX
Entry H L
X
Precharge
LHHH
power down
HX XX
Exit L H
X
LHHH
X
Clock
Suspend
HX XX
Entry H L
X
LVVV
Exit L H X X
X
Rev. 0.2 / June. 2005
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HY5V66EF6.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HY5V66EF6 | (HY5V66ExF6x) CMOS Synchronous DRAM | Hynix Semiconductor |
| HY5V66EF6P | (HY5V66ExF6x) CMOS Synchronous DRAM | Hynix Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |