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Numéro de référence | BAS70-07S | ||
Description | (BAS70-07S / BAS70-08S) RF DETECTION DIODE | ||
Fabricant | ST Microelectronics | ||
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® BAS70-07S / BAS70-08S
RF DETECTION DIODE
FEATURES AND BENEFITS
s LOW DIODE CAPACITANCE
s LOW SERIES INDUCTANCE AND RESISTANCE
s SURFACE MOUNT PACKAGE
DESCRIPTION
Dual and Triple Schottky diode in SOT323-6L
package. This diode is intented to be used in RF
application for signal detection and temperature
compensation.
SOT323-6L
BAS70-07S SCHEMATIC DIAGRAM
BAS70-08S SCHEMATIC DIAGRAM
1 61 6
2 52 5
3 43 4
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VR Continuous reverse voltage
IF Continuous forward current
IFRM Repetitive peak forward current
IFSM Surge non repetitive forward current
P Power Dissipation
Tstg Storage temperature range
Tj Maximum junction temperature
TL Maximum temperature for soldering
tp = 10 ms sinusoidal
Ta = 55°C
Value
70
70
70
1
250
- 65 to +150
150
260
Unit
V
mA
mA
A
mW
°C
°C
°C
December 2001 - Ed: 2A
1/4
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Pages | Pages 4 | ||
Télécharger | [ BAS70-07S ] |
No | Description détaillée | Fabricant |
BAS70-07 | Silicon Schottky Diode | Infineon |
BAS70-07 | SMALL SIGNAL SCHOTTKY DIODE | STMicroelectronics |
BAS70-07 | General-purpose Schottky diodes | NXP Semiconductors |
BAS70-07 | Diode ( Rectifier ) | American Microsemiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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