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ST Microelectronics - (BAS70-07S / BAS70-08S) RF DETECTION DIODE

Numéro de référence BAS70-07S
Description (BAS70-07S / BAS70-08S) RF DETECTION DIODE
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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BAS70-07S fiche technique
www.DataSheet4U.com
® BAS70-07S / BAS70-08S
RF DETECTION DIODE
FEATURES AND BENEFITS
s LOW DIODE CAPACITANCE
s LOW SERIES INDUCTANCE AND RESISTANCE
s SURFACE MOUNT PACKAGE
DESCRIPTION
Dual and Triple Schottky diode in SOT323-6L
package. This diode is intented to be used in RF
application for signal detection and temperature
compensation.
SOT323-6L
BAS70-07S SCHEMATIC DIAGRAM
BAS70-08S SCHEMATIC DIAGRAM
1 61 6
2 52 5
3 43 4
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VR Continuous reverse voltage
IF Continuous forward current
IFRM Repetitive peak forward current
IFSM Surge non repetitive forward current
P Power Dissipation
Tstg Storage temperature range
Tj Maximum junction temperature
TL Maximum temperature for soldering
tp = 10 ms sinusoidal
Ta = 55°C
Value
70
70
70
1
250
- 65 to +150
150
260
Unit
V
mA
mA
A
mW
°C
°C
°C
December 2001 - Ed: 2A
1/4

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