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PDF HY5PS121621F Data sheet ( Hoja de datos )
| Número de pieza | HY5PS121621F | |
| Descripción | (HY5PS12xx21F) 512Mb DDR2 SDRAM | |
| Fabricantes | Hynix Semiconductor | |
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HY5PS12421(L)F
HY5PS12821(L)F
HY5PS121621(L)F
512Mb DDR2 SDRAM
HY5PS12421(L)F
HY5PS12821(L)F
HY5PS121621(L)F
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.0/ Feb. 2005
1
1 page  
1.2 Pin Configuration & Address Table
128Mx4 DDR2 Pin Configuration
1HY5PS12421(L)F
HY5PS12821(L)F
HY5PS121621(L)F
123
789
VDD NC VSS
A VSSQ DQS VDDQ
NC VSSQ DM
B
DQS VSSQ
NC
VDDQ DQ1 VDDQ C VDDQ DQ0 VDDQ
NC
VSSQ
DQ3
D
DQ2 VSSQ
NC
VDDL
VREF
CKE
VSS
WE
E
VSSDL
CK
VDD
F RAS CK ODT
NC BA0 BA1 G CAS CS
A10 A1 H A2 A0 VDD
VSS A3
A5
J
A6 A4
A7 A9
K A11 A8 VSS
VDD
A12
NC
L
NC A13
ROW AND COLUMN ADDRESS TABLE
ITEMS
# of Bank
Bank Address
Auto Precharge Flag
Row Address
Column Address
Page size
128Mx4
4
BA0, BA1
A10/AP
A0 - A13
A0-A9, A11
1 KB
Rev. 1.0 / Feb. 2005
5
5 Page 
3. AC & DC Operating Conditons
1HY5PS12421(L)F
HY5PS12821(L)F
HY5PS121621(L)F
3.1 DC Operating Conditions
3.1.1 Recommended DC Operating Conditions (SSTL_1.8)
Symbol
Parameter
VDD
VDDL
VDDQ
VREF
VTT
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
Min.
1.7
1.7
1.7
0.49*VDDQ
VREF-0.04
Rating
Typ.
1.8
1.8
1.8
0.50*VDDQ
VREF
Max.
1.9
1.9
1.9
0.51*VDDQ
VREF+0.04
Units
V
V
V
mV
V
Notes
4
4
1, 2
3
There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must
be less than or equal to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is
expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).
3. VTT of transmitting device must track VREF of receiving device.
4. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied together
3.1.2 ODT DC electrical characteristics
PARAMETER/CONDITION
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 550 ohm
Deviation of VM with respect to VDDQ/2
SYMBOL MIN NOM MAX UNITS NOTES
Rtt1(eff) 60 75 90 ohm 1
Rtt2(eff) 120 150 180 ohm 1
Rtt2(eff) 40 50 60 ohm 1,2
delta VM -6
+6 % 1
Note 1: Test condition for Rtt measurements
Note 2: Optional for DDR2-400/533/667
Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH
(ac)) and I( VIL (ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18
VIH (ac) - VIL (ac)
Rtt(eff) =
I(VIH (ac)) - I(VIL (ac))
Measurement Definition for VM : Measurement Voltage at test pin(mid point) with no load.
delta VM =
2 x Vm
- 1 x 100%
VDDQ
Rev. 1.0 / Feb. 2005
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet HY5PS121621F.PDF ] | |
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