DataSheetWiki


74AUP1G885 fiches techniques PDF

NXP Semiconductors - Low Power Dual Function Gate

Numéro de référence 74AUP1G885
Description Low Power Dual Function Gate
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





1 Page

No Preview Available !





74AUP1G885 fiche technique
www.DataSheet4U.com
74AUP1G885
Low-power dual function gate
Rev. 01 — 1 December 2006
Product data sheet
1. General description
The 74AUP1G885 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G885 provides two functions in one device.The output state of the outputs
(1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean
function: 1Y = A × C. The output 2Y provides the boolean function: 2Y = A × B + A × C.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114D Class 3A exceeds 4000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; ICC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of VCC
s IOFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specified from 40 °C to +85 °C and 40 °C to +125 °C

PagesPages 17
Télécharger [ 74AUP1G885 ]


Fiche technique recommandé

No Description détaillée Fabricant
74AUP1G885 Low Power Dual Function Gate NXP Semiconductors
NXP Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche