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Número de pieza | PESD5V0S1BA | |
Descripción | Low capacitance bidirectional ESD protection diodes | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
PESD5V0S1BA
Low capacitance bi-directional
ESD protection diode in SOD323
Product specification
2004 Mar 22
1 page www.DataSheet4U.com
Philips Semiconductors
Low capacitance bi-directional
ESD protection diode in SOD323
Product specification
PESD5V0S1BA
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
Per diode
VRWM
IRM
V(CL)R
VBR
rdiff
Cd
reverse standoff voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistant
diode capacitance
VRWM = 5 V
note 1
Ipp = 1 A; note 2
Ipp = 12 A; note 2
IR = 1 mA
IR = 1 mA
f = 1 MHz; VR = 0 V
−−
−5
−−
−−
5.5 −
−−
− 35
Notes
1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.2.
2. Measured from pin 1 to pin 2.
MAX. UNIT
5V
100 nA
10 V
14 V
9.5 V
50 Ω
45 pF
103
Ppp
(W)
102
001aaa202
1.2
Ppp
Ppp(25˚C)
0.8
0.4
001aaa193
10
1
10 102 103 104
tp (µs)
Tamb = 25 °C.
Fig.4 Peak pulse power as a function of 8/20 µs
exponentially decaying waveform
(see Fig.2); typical values.
0
0 50 100 150 200
Tj (°C)
Fig.5 Relative variation of peak pulse power as a
function of junction temperature; typical
values.
2004 Mar 22
5
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Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/01/pp11
Date of release: 2004 Mar 22
Document order number: 9397 750 12256
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet PESD5V0S1BA.PDF ] |
Número de pieza | Descripción | Fabricantes |
PESD5V0S1BA | Low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
PESD5V0S1BB | Low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
PESD5V0S1BL | Low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
PESD5V0S1BSF | Ultra low profile bidirectional low capacitance ESD protection diode | NXP Semiconductors |
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