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Supertex - (VN0635 / VN0640) N-Channel Enhancement-Mode Vertical DMOS FETs

Numéro de référence VN0635
Description (VN0635 / VN0640) N-Channel Enhancement-Mode Vertical DMOS FETs
Fabricant Supertex 
Logo Supertex 





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VN0635 fiche technique
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VN0635
VN0640
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS /
BVDGS
350V
400V
MIL visual screening available
RDS(ON)
(max)
10
10
Features
s Free from secondary breakdown
s Low power drive requirement
s Ease of paralleling
s Low CISS and fast switching speeds
s Excellent thermal stability
s Integral Source-Drain diode
s High input impedance and high gain
s Complementary N- and P-channel devices
ID(ON)
(min)
0.75A
0.75A
Applications
s Motor controls
s Converters
s Amplifiers
s Switches
s Power supply circuits
s Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 20V
-55°C to +150°C
300°C
Order Number / Package
TO-92
Die
VN0635N3 VN0635ND
VN0640N3 VN0640ND
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
SGD
TO-92
Note: See Package Outline section for dimensions.
7-171

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