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Renesas Technology - Silicon N Channel MOS FET High Speed Power Switching

Numéro de référence H7N0608L
Description Silicon N Channel MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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H7N0608L fiche technique
www.DataSheet4U.com
H7N0608LD, H7N0608LS, H7N0608LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0144-0100Z
Rev.1.00
Oct.30.2003
Features
Low on-resistance
RDS(on) = 6.0 mtyp.
Low drive current
Available for 4.5 V gate drive
Outline
LDPAK
D
G
S
4 44
1
2
3
1
2
3
1
2
H7N0608LS H7N0608LM
3
H7N0608LD
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, Oct.30.2003, page 1 of 11

PagesPages 12
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