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PDF FDB8832 Data sheet ( Hoja de datos )
| Número de pieza | FDB8832 | |
| Descripción | N-Channel Logic Level PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
September 2006
FDB8832
N-Channel Logic Level PowerTrench® MOSFET
30V, 80A, 2.1mΩ
Features
Typ rDS(on) = 1.5mΩ at VGS = 5V, ID = 80A
Typ Qg(5) = 100nC at VGS = 5V
Low Miller Charge
Applications
12V Automotive Load Control
Starter / Alternator Systems
Electronic Power Steering Systems
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
ABS
DC-DC Converters
Qualified to AEC Q101
RoHS Compliant
AD FREE I
©2006 Fairchild Semiconductor Corporation
FDB8832 Rev. A
1
www.fairchildsemi.com
1 page  
Typical Characteristics
4000
1000
100
10us
100us
10
LIMITED
BY PACKAGE
1ms
1 OPERATION IN THIS SINGLE PULSE
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
TJ = MAX RATED
TC = 25oC
10
10ms
DC
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10 STARTING TJ = 150oC
1
0.01 0.1 1 10 100 1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
150 VDD = 5V
TJ = 175oC
100
TJ = 25oC
50
TJ = -55oC
200
VGS
=
10V
PULSE DURATION =
DUTY CYCLE = 0.5%
80µs
MAX
VGS = 5V
150
VGS = 3.5V
VGS = 3V
100
50
0
0123
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
4
0
0.0 0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3 TJ = 175oC
2
TJ = 25oC
1
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8832 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDB8832.PDF ] | |
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